technical data pnp darlington pow er silicon transistor qualified per m il - prf - 1 9 5 0 0 / 5 0 5 devices qualified level 2n6286 2n6287 jantx jantxv maximum ratings ratings symbol 2n6286 2n6287 unit collector - emitter voltage v ceo - 80 - 100 vdc colle ctor - base voltage v cbo - 80 - 100 vdc emitter - base voltage v ebo - 7.0 vdc base current i b - 0.5 adc collector current i c - 20 adc total power dissipation (1) @ t c = +25 0 c @ t c = +100 0 c p t 175 87.5 w w operating & storage junction temperature range t op , t stg - 65 to +175 0 c thermal characteristics characteristics symbol max. unit thermal resistance, junction - to - case r q jc 0.857 0 c/w 1) derate linearly @ 1.17 w/ 0 c above t c > +25 0 c *see appendix a for package outline electrical characteristics (t c = 25 0 c unless otherwise noted) characteristics symbol min. max. unit off characteristics collector - emitter breakdown voltage i c = - 100 madc 2n6286 2n6287 v (br) ceo - 80 - 100 vdc collector - emitter cutoff current v ce = - 40 vdc 2n6286 v ce = - 50 vdc 2n6287 i ceo - 1.0 - 1.0 madc collector - emitter cutoff current v ce = - 80 vdc, v be = 1.5 vdc 2n6286 v ce = - 100 vdc, v be = 1.5 vdc 2n6287 i cex - 0.5 - 0.5 madc emitter - base cutoff current v eb = - 7.0 vdc i ebo - 2.5 adc 6 lake street, l awrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 1 of 2 to - 3* (to - 204aa) downloaded from: http:///
2n6286, 2n6287 jan series electrical characteristics (cont) characteristics symbol min. max. unit on characteristics (2) forward - current transfer ratio i c = - 1.0 adc, v ce = - 3.0 vdc i c = - 10 adc, v ce = - 3.0 vdc i c = - 20 adc, v ce = - 3.0 vdc h fe 1,500 1,250 300 18,000 collector - emitter saturation voltage i c = - 20 adc, i b = - 200 madc i c = - 10 adc, i b = - 40 madc v ce(sat) - 3.0 - 2.0 vdc base - emitter saturation voltage i c = - 20 adc, i b = - 200 madc v be(sat) - 4.0 vdc base - emitter voltage i c = - 10 adc, v ce = - 3.0 vdc v be(on) - 2.8 vdc dynamic characteristics magnitude of common em itter small - signal short - circuit forward current transfer ratio i c = - 10 adc, v ce = - 3.0 vdc f = 1.0 mhz ? h fe ? 8.0 80 small - signal short - circuit forward current transfer ratio i c = - 10 adc, v ce = - 3.0 vdc h fe 300 output capacitance v cb = - 10 vdc, i e = 0, 100 khz f 1.0 mhz c obo 400 pf switching characteristics turn - on time v cc = - 30 vdc; i c = - 10 adc; i b = - 40 madc t on 2.0 m s turn - off time v cc = - 30 vdc; i c = - 10 adc; i b1 = i b2 = - 40 madc t off 10 m s safe operating area dc tes ts t c = +25 0 c, 1 cycle, t = 1.0 s test 1 v ce = - 8.75 vdc, i c = - 20 adc all types test 2 v ce = - 30 vdc, i c = - 5.8 adc all types test 3 v ce = - 80 vdc, i c = - 100 madc 2n6286 v ce = - 100 vdc, i c = - 100 madc 2n6287 (2) pulse test: pulse width = 300 m s, duty cycle 2.0%. 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 2 of 2 downloaded from: http:///
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